PURPOSE: To provide a method for manufacturing a high quality semiconductor substrate which has no crack nor other problems and to provide a method for manufacturing a light-emitting device which has a high luminance and a high reliability using that semiconductor substrate.
CONSTITUTION: A buffer layer 2 is formed on a substrate for forming a semiconductor layer 1. By forming a mask 3 on parts of the surface of the buffer layer 2 with such material that no crystal would grow substantially on it, a plurality of exposed sections 21 are formed. Then, a semiconductor layer 4 is formed in the exposed sections 21. Regarding a method for manufacturing a light emitting device, a multilayer section which has a semiconductor active layer and a semiconductor clad layer is formed on the thus-obtained semiconductor substrate.
OKAGAWA HIROAKI
WATABE SHINICHI
HIRAMATSU KAZUMASA
