Title:
MANUFACTURE OF SEMICONDUCTOR USING SACRIFICING OXIDATION FOR SUPPESSING FORMATION OF TUNNELS DURING EVAPORATION OF TUNGSTEN
Document Type and Number:
Japanese Patent JPS6433925
Kind Code:
A
Abstract:
PURPOSE: To improve the reliability by oxidizing a surface of a silicon introducing a boron so as to form a sacrificed oxidation layer and depositing tungsten on the exposed silicon through the removal of the layer, thereby reducing forming of tunnels and decreasing a leakage current at a junction of a P-channel FET. CONSTITUTION: A boron 38 is introduced to part of a semiconductor body 30 made of a single crystal silicon, a dope region 40 is formed along the surface of a main body 38, and a tungsten 44 is deposited on the silicon exposed on the region 40 for the manufacture of the semiconductor device. In this case, a material of the region 40 along the surface is oxidized to form a sacrifice oxidation layer 42, the material of the sacrifice layer 42 is removed downward to the remaining part of the region 40 to expose the silicon under the layer 42, and a tungsten layer 44 is formed. For example, B<+> ions 38 are implanted to an n-channel region 30 covered by a thin silicon dioxide layer 36 to form a p<+> region 40, thereby forming the sacrifice layer 42 by thermal oxidation. Then, the oxide layer 42 is removed through etching and the tungsten 44 is deposited by the reduction of a WF6 .
Inventors:
JIYANETSUTO MEARII DO BURATSUS
MIKERANJIERO DERUFUINO
MIKERANJIERO DERUFUINO
Application Number:
JP11452788A
Publication Date:
February 03, 1989
Filing Date:
May 11, 1988
Export Citation:
Assignee:
PHILIPS NV
International Classes:
H01L21/265; H01L21/28; H01L21/336; H01L21/60; H01L21/768; H01L21/8238; H01L27/092; H01L29/78; (IPC1-7): H01L21/265; H01L21/28; H01L27/08; H01L29/78
Domestic Patent References:
| JPS6218021A | 1987-01-27 |
Attorney, Agent or Firm:
Minoru Nakamura (4 outside)