Title:
MANUFACTURE OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3041497
Kind Code:
B2
Abstract:
PURPOSE: To form a crystalline silicon film of low cost, by forming clusters or the like on a silicon film, annealing the film at a temperature lower than the crystallization temperature of ordinary crystal silicon, and performing annealing at a temperature in a specified range, in an atmosphere containing chlorine atoms like chlorine or chloride.
CONSTITUTION: A substratum silicon oxide film 2 is formed on a substrate 1 by a plasma CVD method. A nickel film 3 is deposited to be 1000&angst thick or less by a sputtering method. An amorphous silicon film 4 is deposited to be 1500&angst thick by a plasma CVD method. Hydrogen outgasing is performed for 1-2 hours at 430°C in a nitrogen atmosphere. After that, annealing is performed in an anealing furnace at 450°C for 8 hours, in a nitrogen atmosphere. After crystallization is ended, the temperature is kept at 400-600°C, and trichloroethylene (C2HCl3) which is diluted with hydrogen or oxygen to be 1-10% is introduced into the annealing furnace, and annealing is performed for 1 hour.
Inventors:
Shunpei Yamazaki
Yasuhiko Takemura
Yasuhiko Takemura
Application Number:
JP4853593A
Publication Date:
May 15, 2000
Filing Date:
February 15, 1993
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/324; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/20; H01L21/336; H01L29/786
Domestic Patent References:
| JP697101A |
Attorney, Agent or Firm:
Hirokuni Kamo