Title:
MANUFACTURE OF SILICON WAFER
Document Type and Number:
Japanese Patent JPS6043813
Kind Code:
A
Abstract:
PURPOSE:To obtain silicon wafers enabled to easily take out from a container and provided with a smooth surface by furthermore covering the container made of one or more kinds from among silicon nitride, boron nitride, and quarz with a powdery parting agent of said materials. CONSTITUTION:An internal wall surface of a container 1 made of one or more kinds from among silicon nitride, boron nitride, and quarz is covered with a powdery parting agent 3 made of materials of one or more kinds from among silicon nitride, boron nitride, and quarz. Next, silicon powder 2 is put in a concave body 1a surrounded by a high-frequency heating body 4 and a convex covering body 1b and the high-frequency heating body 4 are placed on the concave body 1a so as to engage the concave body with the convex covering body, to heat the silicon powder 2 in an argon atmosphere. The silicon powder 2 is fused by heat application and pressured by the self-weights of the convex body 1b and the upper high-frequency heating body 4 to form a thin disk. Polycrystalline silicon wafers are taken out of the container 1 after heat dissipation.
Inventors:
YOSHINO HISASHI
HAGA MASAKATSU
HAGA MASAKATSU
Application Number:
JP15151483A
Publication Date:
March 08, 1985
Filing Date:
August 22, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L31/04; H01L21/02; H01L21/208; (IPC1-7): H01L21/208; H01L31/04
Attorney, Agent or Firm:
Noriyuki Noriyuki