Title:
MANUFACTURE OF SUPERCONDUCTING THIN FILM
Document Type and Number:
Japanese Patent JPS6465885
Kind Code:
A
Abstract:
PURPOSE:To easily produce a superconducting thin film having a large area and one having an excellent response speed by growing a single crystal of magnesian spinel on an Si single crystal plate and depositing superconductive substances on the grown single crystal. CONSTITUTION:In an Al-HCl-MgCl2-CO2-H2 phase epitaxial growth equipment by CVD method, H2 gas and H2+HCl gas are introduced from gas introduction ports 1 and 2 respectively, then MgCl2 source gas 3 and AlCl3 source gas 4 which is generated by the reaction of Al and HCl are carried onto an Si substrate 5. Then the source gases and CO gas introduced through the gas introduction port 6 are reacted for epitaxial growth of magnesian spinel monocrystal on the Si substrate. Y-Ba-Cu-O superconductive film is deposited on the monocrystal by sputtering process.
Inventors:
TAGUCHI EIJI
KAWAHARA KEITA
KAWAHARA KEITA
Application Number:
JP22337887A
Publication Date:
March 13, 1989
Filing Date:
September 07, 1987
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L39/24; C23C14/06; C23C16/30; C30B29/22; H01B12/06; H01B13/00; (IPC1-7): C23C14/06; C23C16/30; C30B29/22; H01B12/06; H01B13/00; H01L39/24
Domestic Patent References:
| JPS6246676B2 | 1987-10-03 | |||
| JPS6228446A | 1987-02-06 |
Attorney, Agent or Firm:
Takuji Nishino (1 person outside)