PURPOSE: To provide a semiconductor device with an increase channel mobility and lower threshold by implanting inactive ions into an amorphous silicon film with a reduced nucleus density of an n-MOS semiconductor region, without implanting such ions into a p-MOS semiconductor region.
CONSTITUTION: An n-MOS semiconductor region (n) and a p-MOS semiconductor region (p) are formed on a glass substrate 1. A common input is connected with the gate electrodes of the semiconductor regions (n) and (p), while a common output is connected with drain electrodes D. The n-MOS semiconductor region (n) includes an active polysilicon film 2n, which is obtained by implanting S+ ions into an amorphous silicon film, and annealing it for crystallization with a reduced nucleus density. The p-MOS semiconductor region (p) includes an active polysilicon film 2p, which is obtained by annealing a defect-free amorphous silicon film without implanting S+ ions. The n-MOS and P-MOS semiconductor regions have the same threshold in absolute value.
NISHIHARA YOSHIO
HIROTA MASANORI
KATO SUKEJI
