Title:
MANUFACTURE OF THIN FILM CONSISTING OF POLYATOMIC OXIDE AND POLYATOMIC NITRIDE
Document Type and Number:
Japanese Patent JP3403651
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve the step coverage of a polyatomic oxide thin film and of a polyatomic nitride thin film and thereby lessen impurities in the film, by supplying a precursor including metal elements constituting thin films to be formed into a reaction chamber, and then supplying oxidizing gas and then an organic ligand into the reaction chamber.
SOLUTION: A semiconductor substrate 10 formed with a base film 12 is loaded into a reaction chamber. After that, a precursor including cation metal elements having large diameters and cation metal elements having small diameters is supplied into the reaction chamber to allow the precursor to bond with the base film. Nextly, inert gas is supplied into the reaction chamber to purge the remaining precursor out of the reaction chamber, and then reactive oxidizing gas is supplied into the reaction chamber to form an oxide film 16 on the base film 12. In like manner, the remaining oxidizing gas is purged out of the reaction chamber and then an organic ligand such as acetylacetone and the like is supplied into the reaction chamber to improve the flatness of the surface of the oxide film 16.
Inventors:
Hiroshi Kim
Application Number:
JP29980898A
Publication Date:
May 06, 2003
Filing Date:
October 21, 1998
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L21/31; C23C16/40; C23C16/56; H01L21/316; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; C23C16/44; (IPC1-7): H01L21/316; C23C16/40; C23C16/56
Domestic Patent References:
| JP6151383A | ||||
| JP9213643A | ||||
| JP738003A |
Attorney, Agent or Firm:
Mikio Hatta (3 outside)