PURPOSE: To enable to produce a uniform thin film diode by a simple process by forming by self-aligning a patterned semiconductor layer on the superposed parts of the first and second patterns, reducing the number of the patterns, and accurately improving the matching of both.
CONSTITUTION: The first electrode layer 14 and a semiconductor layer 15 are patterned in the first pattern 11. Then, the layer 15 is patterned by the pattern 13 as designated by 16. This is the preparation for mutually connecting the first and second electrode layers at the parts 101, 102, and not necessary when using for the sole diode. Subsequently, the second electrode layer 17 is patterned in the pattern 12, with the layer 17 as a mask the layer 16 is patterned in the pattern 18. Thus, the layer 15 is formed by self-aligning the superposed parts of the first and second patterns as designated by 18. As a result, the matching accuracy between the pattern is alleviated, and the elements of the same shape is accurately formed even though slightly displaced.
TANABE HIROSHI
SEKIGUCHI KANETAKA
AOTA KATSUMI
TOGASHI SEIGO
YAMAMOTO ETSUO
| JPS57211787A | 1982-12-25 | |||
| JPS56165186A | 1981-12-18 |