PURPOSE: To constitute a thin film transistor into a structure having no step difference and to inhibit the leakage current between the gate and source electrodes and that between the gate and drain electrodes by a method wherein a metal layer, which is used as the material for the source and drain electrodes, is coated on the whole surface of the substrate and after parts of the metal layer other than the metal layer at the programming regions for forming the source and drain electrodes are oxidized, the semiconductor thin film, the gate oxide film and the gate electrode are provided on the source and drain electrodes.
CONSTITUTION: A Ta film is coated on an insulative substrate 1 consisting of glass or quartz, the source electrode and drain electrode forming parts are respectively covered with a resist film and the exposing parts of the Ta film are anodized using a solution containing oxalic acid and are turned into Ta2O5 insulating layer 12. A source electrode 13 and a drain electrode 14, each consisting of the Ta film made to remain in such a way, are encircled with the layers 12, the surfaces thereof are flattened, the resist films are removed and a channel layer 15, which is extendedly laid on the edge parts of the layers 12, is formed on the electrodes 13 and 14. After that, a gate insulating layer 16 is coated thereon and a gate electrode 17 is provided thereon. According to such a way, the leakage current between the gate and source electrodes and that between the gate and drain electrodes become remarkably less.
YOSHIDA MAMORU
WATANABE TSUKASA
| JPS5721867A | 1982-02-04 | |||
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