Title:
MANUFACTURE OF THIN FILM
Document Type and Number:
Japanese Patent JPH10172968
Kind Code:
A
Abstract:
To provide a method for forming a thin film whose film quality is uniform on a metal film.
A gate metal film 19 formed on a glass substrate 18 is placed on a ground electrode 14 in the reaction room 12 of a plasma CVD device in a state where it is connected with a grounded film forming holder 20. A silicon nitride film is deposited on the glass substrate 18 in such a state. Since a potential difference between a discharge electrode 13 and the gate metal film 19 becomes constant by the method, the film quality of the silicon nitride film formed on the gate metal film 19 can be made uniform.
Inventors:
KUWAYAMA SHINTARO
MOROSAWA KATSUHIKO
MOROSAWA KATSUHIKO
Application Number:
JP34042096A
Publication Date:
June 26, 1998
Filing Date:
December 06, 1996
Export Citation:
Assignee:
CASIO COMPUTER CO LTD
International Classes:
H01L21/205; H01L21/31; H01L21/316; H01L21/336; H01L29/786; (IPC1-7): H01L21/316; H01L21/205; H01L21/31; H01L21/336; H01L29/786
Attorney, Agent or Firm:
Jiro Sugimura
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