Title:
MANUFACTURE OF WAFER BOAT FOR SEMICONDUCTOR DIFFUSING FURNACE
Document Type and Number:
Japanese Patent JP2701615
Kind Code:
B2
Abstract:
PURPOSE: To easily form thick SiC film causing no cracking at all by a method wherein a graphite base material corresponding to a bar part formation part is masked to form a silicon carbide film in a method of manufacturing the title wafer boat in hollow shell structure comprising the silicon carbide film.
CONSTITUTION: A graphite base material taking a wafer boat shape is made of isotropical high purity graphite of anisotropy ratio of 1.03, containing 100ppm ash using the assembling system. Next, the opposite side surface to the trench in the bar member formation part is masked in width of 8mm to perform the SiC coating step at 1450°C using SiCl4/C3H8/H2 mixed gas. The SiC film shall be 0.35mm thick. The deflection of the bar member formation part in the coating stage shall not exceed 0.1mm. Next, the graphite base material is burnt to be removed. Through these procedures, the title wafer boat taking a specific shape can be manufactured with high shape precision.
Inventors:
Kyone Koji
Fusao Fujita
Yasuhiko Kawamura
Kazuaki Miyazaki
Fusao Fujita
Yasuhiko Kawamura
Kazuaki Miyazaki
Application Number:
JP24926891A
Publication Date:
January 21, 1998
Filing Date:
September 27, 1991
Export Citation:
Assignee:
Mitsui Shipbuilding Co., Ltd.
International Classes:
C30B25/12; H01L21/205; H01L21/22; H01L21/68; H01L21/683; (IPC1-7): H01L21/22; C30B25/12; H01L21/205; H01L21/22; H01L21/68
Domestic Patent References:
| JP4983706A | ||||
| JP5062579A | ||||
| JP577923A |
Attorney, Agent or Firm:
Tsuyoshi Shigeno
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