Title:
MANUFACTURING APPARATUS OF SILICON CARBIDE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2020026367
Kind Code:
A
Abstract:
To provide a manufacturing apparatus of a silicon carbide single crystal capable of suppressing cracks of a membrane containing a metal carbide formed on the inner surface of a crucible.SOLUTION: A manufacturing apparatus of a silicon carbide single crystal according to one embodiment of the disclosure is equipped with a crucible having a first part and a second part and a first membrane and a second membrane. The crucible is made of graphite. The first part houses silicon carbide raw material. The second part is connected to the upper end of the first part. The first membrane is made of a carbon material of lower hardness than graphite and formed on the inner surface of the second part. The second membrane is formed on the first membrane and contains a metal carbide.SELECTED DRAWING: Figure 1
Inventors:
SASAKI SUSUMU
NISHIGUCHI TARO
NISHIGUCHI TARO
Application Number:
JP2018151249A
Publication Date:
February 20, 2020
Filing Date:
August 10, 2018
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B29/36; C30B23/06; F27B14/10
Attorney, Agent or Firm:
Fukami patent office