Title:
MANUFACTURING DEVICE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3041318
Kind Code:
B2
Abstract:
PURPOSE: To obtain a bonding device, in which total height (Hc) deviation of a bump and a lead in a chip is suppressed and too flatened part, the contact of an adjacent bump, and the damage on a bump base are difficult to be generated when the electrode and lead of the semiconductor chip are gang-bonded.
CONSTITUTION: The temperature difference of the temperature of a stage and the temperature of a tool is reduced, and the stage is formed in the size of 30mm&phiv or more and 10mmt or more. The quality of material having small FαρC/λ such as silicon nitride is use, thus decreasing the quantity of Hc dispersed in a chip.
Inventors:
Koji Sato
Tomoaki Hashimoto
Masatoshi Yasunaga
Tomoaki Hashimoto
Masatoshi Yasunaga
Application Number:
JP11873992A
Publication Date:
May 15, 2000
Filing Date:
May 12, 1992
Export Citation:
Assignee:
Shinkawa Co., Ltd.
Mitsubishi Electric Corporation
Mitsubishi Electric Corporation
International Classes:
H01L21/603; H01L21/60; (IPC1-7): H01L21/60
Domestic Patent References:
| JP4171739A | ||||
| JP3206635A | ||||
| JP63112339U |
Attorney, Agent or Firm:
Kaneo Miyata (2 outside)