SiC半導体装置の製造方法 - Panasonic Corporation

Title:

SiC半導体装置の製造方法

Document Type and Number:

Japanese Patent JP4666200

Kind Code:

B2

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Inventors:

Makoto Kitabatake
Kunikata Takahashi
Hiroyuki Matsunami
Tsunenobu Kimoto

Application Number:

JP2004171808A

Publication Date:

April 06, 2011

Filing Date:

June 09, 2004

Export Citation:

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Assignee:

Panasonic Corporation
Kyoto University

International Classes:

H01L21/265; H01L29/16

Domestic Patent References:

JP2001068428A
JP2003062708A
JP2005039257A

Other References:

Jones KA, et al.,"A comparison of graphite and AlN caps used for annealing ion-implanted SiC",JOURNAL OF ELECTRONIC MATERIALS,2002年 6月,Vol. 31, No. 6,pp. 568-575

Attorney, Agent or Firm:

Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori

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