Title:
MANUFACTURING METHOD OF ALUMINIUM WIRING OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5226188
Kind Code:
A
Abstract:
PURPOSE:Improvement of the ohm contact and the characteristic of semiconductor unit by introducing a double layer structure of the Al layer including Si and the Al layer not including Si.
Inventors:
HIRASHIMA TOSHITSUNE
OGURA SADAO
OGURA SADAO
Application Number:
JP10219075A
Publication Date:
February 26, 1977
Filing Date:
August 25, 1975
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/3205; H01L21/28; H01L23/52; (IPC1-7): H01L21/88