PURPOSE: To form the title HBT(heterojunction bipolar transistor) in the state of another layer entirely removed from a base layer but capable of making an emitter approach a base electrode.

CONSTITUTION: A collector layer 2, a base layer 3, an emitter layer 4 are successively laminated on a substrate 1 and then the first resist 5 is provided on the surface of the emitter layer 4 to form an emitter 4a by etching step (a). The first resist 5 is irradiated with for ultraviolet rays to be set. Next, the whole surface is coated with the second resist 6 and then the parts of the second resist 6 on the base layer 3 are removed by photolithography. At this time, the first resist 5 is left intact. Next, a metallic layer 7 is evaporated on the surface (b) and then lifted off to form a base electrode 7a close to the emitter 4a. Finally, after exposing a collector layer 2' on the peripheral part (c), an emitter electrode 10a and a collector electrode 10b are formed.