MANUFACTURING METHOD OF COUPLED SUBSTRATE

Title:

MANUFACTURING METHOD OF COUPLED SUBSTRATE

Document Type and Number:

Japanese Patent JP2006080314

Kind Code:

A

Abstract:

To reduce occurrence of a defect such as a void and to improve a coupling strength in manufacturing a coupled substrate.

The manufacturing method of a coupled substrate includes a coupling surface processing step for processing at least one of first and second substrates each including a coupling surface containing silicon and a coupling step for coupling the coupling surface of the first substrate and the coupling surface of the second substrate. The coupling surface processing step includes an OH radical increasing step S100 for increasing OH radicals on the coupling surface, and a moisture reducing step S120 for reducing moisture by heating the coupling surface whereon the OH radicals are increased, at a temperature within the range of 50 to 200°C.

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Inventors:

AHEI TADASHI
MORIWAKI TAKAHARU

Application Number:

JP2004262966A

Publication Date:

March 23, 2006

Filing Date:

September 09, 2004

Export Citation:

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Assignee:

CANON KK

International Classes:

H01L27/12; H01L21/02

Attorney, Agent or Firm:

Yasunori Otsuka
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura

Previous Patent: ３’−ホスホアデノシン−５’−ホスホ硫酸の酵素合成法

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