Title:
表示装置の作製方法
Document Type and Number:
Japanese Patent JP7269397
Kind Code:
B2
Abstract:
A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device including an oxide semiconductor film. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a channel region and n-type regions in contact with the pair of electrodes. The channel region has fewer oxygen vacancies than the n-type regions.
Inventors:
Sanpei Yamazaki
Junichi Kozuka
Kenichi Okazaki
Masami Kaminaga
Yasutaka Nakazawa
Toshimitsu Ikuuchi
Yukinori Shima
Daisuke Kurosaki
Junichi Kozuka
Kenichi Okazaki
Masami Kaminaga
Yasutaka Nakazawa
Toshimitsu Ikuuchi
Yukinori Shima
Daisuke Kurosaki
Application Number:
JP2022022090A
Publication Date:
May 08, 2023
Filing Date:
February 16, 2022
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; G02F1/1368; G09F9/30; H01L27/146; H01L29/786; H05B33/14; H10K50/00; H10K59/12
Domestic Patent References:
| JP2013153156A | ||||
| JP2014179625A | ||||
| JP2013175713A | ||||
| JP2013138189A |
Foreign References:
| US20130161610 | ||||
| US20130187153 | ||||
| US20130137232 |
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