電界効果型トランジスタの製造方法

Title:

電界効果型トランジスタの製造方法

Document Type and Number:

Japanese Patent JP4878105

Kind Code:

B2

Abstract:

To provide a field effect transistor having high electron field effect mobility which can be obtained by a simple method.

This field effect transistor has an organic semiconductor layer, consisting of a crystallized film of a naphto-porphyrin compound which is expressed by a formula 2 and is obtained by converting a coating, made of an organic solvent soluble porphyrin compound expressed by a formula 1 through heating it at 200 to 350°C. The organic semiconductor layer has a thickness of 30 to 150 nm, a maximum crystal grain diameter of 1 μm or larger, and strong absorption at 650 nm or longer. In the formulas, R1and R2respectively represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group having a carbon number of 1 to 12, R3represents a hydrogen atom or an aryl group, and M represents two hydrogen atoms, a metal atom or a metal oxide.

Inventors:

Daisuke Miura
Hiroharu Nakayama

Application Number:

JP2004106680A

Publication Date:

February 15, 2012

Filing Date:

March 31, 2004

Export Citation:

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Assignee:

Canon Inc

International Classes:

C07D487/22; H01L51/05; C07F1/08; H01L21/336; H01L29/786; H01L51/00; H01L51/30; H01L51/40

Other References:

小野昇、外2名,共役拡張ピロール多量体の合成と機能,電子情報通信学会技術研究報告. OME, 有機エレクトロニクス,日本,社団法人電子情報通信学会,2001年 5月25日,Vol.101, No.103,pp.1-6
秋山泰士,Diels-Alder反応と逆Diels-Alder反応を利用した共役拡張分子の合成,日本化学会第81春季年会講演予稿集II,2002年 3月26日,p.990(2F9-14)
Satoshi Ito et.al.,A new synthesis of benzoporphyrins using 4,7-dihydro-4,7-ethano-2H-isoindole as a synthon of isoindo,Chemical Communications,英国,1998年,Issue 16,pp.1661-1662
Satoshi Ito et al.,A new synthesis of [2,3]naphthoporphyrins,Chemical Communications,2000年,Issue 11,p.893-894

Attorney, Agent or Firm:

Takuma Abe
Sogo Kuroiwa

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