MANUFACTURING METHOD OF FLASH MEMORY

Title:

MANUFACTURING METHOD OF FLASH MEMORY

Document Type and Number:

Japanese Patent JP2005302996

Kind Code:

A

Abstract:

To provide a manufacturing method of a flash memory which is reduced in the amount of an organic gaseous substance in an environmental atmosphere and capable of manufacturing a quantum dot having a size and/or density within an optimum range, in the manufacturing method the a flash memory which forms the quantum dot on the insulating film of a semiconductor substrate as a floating gate.

The manufacturing method of the flash memory retains the environmental atmosphere of the semiconductor substrate before forming the quantum dot clean by an organic gaseous substance removing means, in the manufacturing method of the flash memory which forms an insulating film on the semiconductor substrate and forms the quantum dot on the insulating film as the floating gate.

Inventors:

TSUTSUMI OSAMU
OKURA KENSAKU
IKEDA MITSUHISA
NIINUMA HITOSHI
YOKOYAMA ARATA

Application Number:

JP2004116705A

Publication Date:

October 27, 2005

Filing Date:

April 12, 2004

Export Citation:

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Assignee:

NIPPON MUKI KK
UNIV HIROSHIMA

International Classes:

H01L29/06; H01L21/8247; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L27/115; H01L29/06; H01L29/788; H01L29/792

Attorney, Agent or Firm:

Yoshihiro Shimizu
Shinichi Abe
Yuji Tsujida

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