Title:
MANUFACTURING METHOD OF GALLIUM NITRIDE THIN FILM AND GALLIUM NITRIDE THIN FILM
Document Type and Number:
Japanese Patent JP2016149493
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To establish a manufacturing method of a gallium nitride thin film of higher quality by setting a condition to be specified when manufacturing a GaN thin film and to provide a GaN thin film with high light-emitting efficiency.SOLUTION: The manufacturing method of a gallium nitride thin film uses triethylgallium, ammonia, and triethylamine. A total content of impurities in the triethylamine is less than or equal to 1000 ppm in mol ratio.SELECTED DRAWING: None
Inventors:
KAMEOKA TAKASHI
TARUYA KOHEI
MIZUNO KENJI
NAKANO YUSUKE
NAKAMURA MASAKAZU
TARUYA KOHEI
MIZUNO KENJI
NAKANO YUSUKE
NAKAMURA MASAKAZU
Application Number:
JP2015026504A
Publication Date:
August 18, 2016
Filing Date:
February 13, 2015
Export Citation:
Assignee:
AIR LIQUIDE JAPAN LTD
International Classes:
H01L21/205; C23C16/18; C23C16/34; C23C16/455; C30B29/38; H01L33/32
Domestic Patent References:
| JP2008300615A | 2008-12-11 | |||
| JPS5062912A | 1975-05-29 | |||
| JP2009285533A | 2009-12-10 | |||
| JP2003300943A | 2003-10-21 | |||
| JPS63258471A | 1988-10-25 | |||
| JP2004056116A | 2004-02-19 | |||
| JPH09251957A | 1997-09-22 | |||
| JP2009184836A | 2009-08-20 | |||
| JP2007161599A | 2007-06-28 |
Attorney, Agent or Firm:
Patent Business Corporation Unias International Patent Office