Title:
MANUFACTURING METHOD OF IMAGING APPARATUS AND IMAGING SYSTEM
Document Type and Number:
Japanese Patent JP2018107358
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To solve such a problem that when light on the long wavelength side, e.g., infrared light, enters, charges generated at a deep position of a semiconductor substrate have a risk of mixing into the photoelectric conversion part of an adjoining pixel.SOLUTION: A manufacturing method of imaging apparatus has a first step of performing ion implantation of impurity ions of second conductivity type different from the first conductivity type, in a first region below a region becoming a charge storage region, and a second region continuous to the first region below an element isolation part, and located at a shallower position than the first region, by using a first mask, and a second step of performing ion implantation of second conductivity type impurity ions, in a third region below the region becoming the charge storage region, and located at a shallower position than the first region, and a fourth region continuous to the third and second regions below the element isolation part, and located at a shallower position than the third and second regions, by using a second mask, where the first and second masks cover the upper part of the element isolation part, and have an opening corresponding at least to a region becoming the charge storage region.SELECTED DRAWING: Figure 3
Inventors:
INUI FUMIHIRO
SANO HIROAKI
SANO HIROAKI
Application Number:
JP2016254363A
Publication Date:
July 05, 2018
Filing Date:
December 27, 2016
Export Citation:
Assignee:
CANON KK
International Classes:
H01L27/146; H01L21/265; H01L21/76; H04N5/33; H04N5/374
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Foreign References:
| US20120077301A1 | 2012-03-29 |
Attorney, Agent or Firm:
Takuma Abe
Sogo Kuroiwa
Sogo Kuroiwa