Title:
液晶移相器、液晶アンテナ及び液晶移相器の製造方法
Document Type and Number:
Japanese Patent JP6992184
Kind Code:
B2
Abstract:
The present disclosure provides a liquid crystal phase shifter, including a first substrate and a second substrate which are disposed oppositely, and a liquid crystal layer located between the first substrate and the second substrate. A first metal film layer is disposed on a side of the first substrate facing the second substrate. A second metal film layer is disposed on a side of the second substrate facing the first substrate. The first metal film layer and the second metal film layer arc both patterned metal film layers. The first substrate and the second substrate are both PCBs. The present disclosure further provides a liquid crystal antenna, including the abovementioned liquid crystal phase shifter. The present disclosure further provides a manufacturing method of a liquid crystal phase shifter, which is used for manufacturing the abovementioned liquid crystal phase shifter. In ultra-high-frequency wireless communications, the larger a dielectric constant and a dielectric loss value of a substrate material are, the higher the dielectric loss is, and the poorer signals are. The PCBs used in the present application are used as the substrates of the liquid crystal antenna. The dielectric constants and the dielectric loss of the PCBs are less than those of a glass substrate usually used by a liquid crystal panel, so that the PCBs are lower in dielectric loss, which is favorable for improving the performance of the liquid crystal antenna in ultra-high frequency band application.
More Like This:
| JP2014011473 | METHOD OF MANUFACTURING WAVEGUIDE |
| JP4799130 | How to make IC chips and IC chips |
| JP2019216329 | HOLLOW WAVEGUIDE AND METHOD OF MANUFACTURING THE SAME |
Inventors:
Liu Tomio
Xu Hibiki
King Tatsuo
Yellow English group
王 ▲ふ▼新
▲ざん▼ 端清
How strong
Xu Hibiki
King Tatsuo
Yellow English group
王 ▲ふ▼新
▲ざん▼ 端清
How strong
Application Number:
JP2020531607A
Publication Date:
January 13, 2022
Filing Date:
April 11, 2019
Export Citation:
Assignee:
TRULY SEMICONDUCTORS LTD.
International Classes:
H01P11/00; H01P1/18; H01Q3/36
Domestic Patent References:
| JP2014531843A |
Foreign References:
| US20180182556 | ||||
| US20160164155 |
Attorney, Agent or Firm:
try international patent corporation