To provide a manufacturing method of micromachine in which the freedom of selection of a substrate is increased by a novel method to allow the use of an inexpensive substrate and also allow the manufacture of a structure having a large difference in level.
Au/Ti films (2, 3, 4, 12a, and 12b) forming an insulating layer 5 and a line conductor or control electrode are formed on a high resistance silicon-substrate 1, and an insulating layer 6 is formed thereon. A copper film 20 as conductive sacrifice layer is formed on the substrate 1. A photoresist 22 is formed thereon, an amorphous Ni-P film 8 is accumulated on the substrate 1 including the Cu-sacrifice layer 20 by electroless plating method (electroless Ni-P plating). The Cu sacrifice layer 20 is removed by etching to make the amorphous Ni-P film 8 into a beam structure.
MATSUGAYA KAZUOKI
HAZUMI HIROSHI
| JPH10148643A | 1998-06-02 | |||
| JPH0653687A | 1994-02-25 | |||
| JPH01264618A | 1989-10-20 |