Title:
窒化物系半導体発光素子の製造方法
Document Type and Number:
Japanese Patent JP4368225
Kind Code:
B2
Abstract:
A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.
Inventors:
Tatsuya Kunisato
Ryoji Hiroyama
Masayuki Hata
Kiyoshi Ota
Ryoji Hiroyama
Masayuki Hata
Kiyoshi Ota
Application Number:
JP2004066624A
Publication Date:
November 18, 2009
Filing Date:
March 10, 2004
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L23/58; H01L27/15; H01L29/165; H01L29/167; H01L29/22; H01L31/12; H01L31/153; H01L33/06; H01L33/22; H01L33/32
Domestic Patent References:
| JP2003174193A | ||||
| JP2003532298A | ||||
| JP6291368A | ||||
| JP2000196152A | ||||
| JP2001230448A | ||||
| JP2005085932A | ||||
| JP9008403A | ||||
| JP10163525A |
Foreign References:
| WO2003034508A1 | ||||
| WO2003088318A1 | ||||
| EP1385215A1 |
Attorney, Agent or Firm:
Hirokazu Miyazono