Title:
窒化物半導体光電極の製造方法
Document Type and Number:
Japanese Patent JP7137070
Kind Code:
B2
Abstract:
Provided is a method for producing a nitride semiconductor photoelectrode capable of improving the light energy conversion efficiency. The method for producing a nitride semiconductor photoelectrode includes a first step of forming an n-type gallium nitride layer on an insulating or conductive substrate, a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer, a third step of forming a nickel layer n the indium gallium nitride layer, and a fourth step of heat-treating the nickel layer in an oxygen atmosphere.
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Inventors:
Yuya Swirl
Sato Sayumi
Yoko Ono
Takeshi Komatsu
Sato Sayumi
Yoko Ono
Takeshi Komatsu
Application Number:
JP2018226249A
Publication Date:
September 14, 2022
Filing Date:
December 03, 2018
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
B01J27/24; C25B11/073; B01J35/02; B01J37/02; B01J37/14; C23C14/14; C23C14/58; C23C16/34; C25B1/04; C25B11/087; H01G9/20
Domestic Patent References:
| JP2017210666A | ||||
| JP2013115112A | ||||
| JP2010010591A | ||||
| JP2017017173A | ||||
| JP2015147190A |
Other References:
SEKIMOTO, Takeyuki, et al.,Analysis of Products from Photoelectrochemical Reduction of 13CO2 by GaN-Si Based Tandem Photoelectrode,Journal of Physical Chemistry C,Vol. 120, No. 7,2016年06月02日,13970-13975
Attorney, Agent or Firm:
Hidekazu Miyoshi
Rie Kudo
Rie Kudo
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