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Title:
フォトニック結晶半導体デバイスの製造方法
Document Type and Number:
Japanese Patent JP4833665
Kind Code:
B2
Abstract:
To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.

Inventors:
Satoshi Kise
Kimoto Tatsuya
Noriyuki Yokouchi
Toshihiko Baba
Application Number:
JP2005518034A
Publication Date:
December 07, 2011
Filing Date:
February 16, 2005
Export Citation:
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Assignee:
THE FURUKAW ELECTRIC CO.,LTD.
Toshihiko Baba
International Classes:
G02F1/015; G02B6/12; G02B6/122; G02F1/025; H01S5/026; H01S5/12; G02F1/017; H01S5/10; H01S5/183; H01S5/20
Domestic Patent References:
JPH10284806A1998-10-23
JP2002303836A2002-10-18
JPH0750443A1995-02-21
Foreign References:
GB2366666A2002-03-13
Attorney, Agent or Firm:
Yoshihiko Emura
Shuichi Sumiyoshi
Yasushi Miyagi
Toshio Yano
Takuya Kuno
Kimihiro Hoshi
Hiroyasu Ninomiya
Einzel Felix-Reinhard
Kouji Akanekubo
Takaho Kawawa
Toshiomi Yamazaki
Kouji Akanekubo
Takaho Kawawa



 
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