Title:
半導体装置の製造方法、半導体装置、電力変換装置
Document Type and Number:
Japanese Patent JP7070373
Kind Code:
B2
Abstract:
A method of manufacturing a semiconductor device includes providing, in a housing, an insulating substrate having a metal pattern, a semiconductor chip, a sinter material applied on the semiconductor chip, and a terminal, providing multiple granular sealing resins supported by a grid provided in the housing, heating an inside of the housing until a temperature thereof reaches a first temperature higher than a room temperature and thereby discharging a vaporized solvent of the sinter material out of the housing via a gap of the grid and a gap of the sealing resins, and heating the inside of the housing until the temperature thereof reaches a second temperature higher than the first temperature and thereby causing the melted sealing resins to pass the gap of the grid and form a resin layer covering the semiconductor chip.
Inventors:
Kenta Nakahara
Akinori Shirao
Akinori Shirao
Application Number:
JP2018222284A
Publication Date:
May 18, 2022
Filing Date:
November 28, 2018
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L25/07; H01L21/56; H01L23/29; H01L23/31; H01L25/18
Domestic Patent References:
| JP2015220238A | ||||
| JP2003224231A | ||||
| JP11191605A | ||||
| JP2017210593A | ||||
| JP2015133462A |
Foreign References:
| WO2002059969A1 | ||||
| US20180233422 | ||||
| WO2018185974A1 |
Attorney, Agent or Firm:
Takada Mamoru
Hideki Takahashi
Kuno Yoshimi
Hideki Takahashi
Kuno Yoshimi