Title:
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SHUNT RESISTOR
Document Type and Number:
Japanese Patent JP2003203805
Kind Code:
A
Abstract:
To provide a semiconductor device provided with a shunt resistor which has a compact structure, detecting large current with high accuracy and having high heat radiation.
In the semiconductor device with the built-in shunt resistor detecting the current which flows to a semiconductor element 12 attached to an insulating circuit board 5 on a heat radiation plate 6, the shunt resistor 4 is provided with a U-shaped metal plate 2 connecting a straight line part to the insulating circuit board 5, and an insulating material 1 jointed between a pair of the straight line parts of the metal plate with a jointing material.
Inventors:
KIMURA SUSUMU
KASHIBA YOSHIHIRO
KIMOTO NOBUYOSHI
FUKADA MASAKAZU
YOSHIDA TAKANOBU
KASHIBA YOSHIHIRO
KIMOTO NOBUYOSHI
FUKADA MASAKAZU
YOSHIDA TAKANOBU
Application Number:
JP2002273142A
Publication Date:
July 18, 2003
Filing Date:
September 19, 2002
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01C3/14; H01C13/00; H01L25/07; H01L25/18; (IPC1-7): H01C13/00; H01C3/14; H01L25/07; H01L25/18
Attorney, Agent or Firm:
Soga Doteru (6 people outside)