Title:
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2001319896
Kind Code:
A
Abstract:
To provide a method for manufacturing a semiconductor device that does not include boreholes in a plated layer.
Plating is made twice. More specifically, a first plated layer is formed on a substrate, and annealing is made for forming a second plated layer.
Inventors:
BOKU YOSHIHIRO
TANAKA YOSHIJI
KATO YOSHINORI
SATO HIROSHI
TANAKA YOSHIJI
KATO YOSHINORI
SATO HIROSHI
Application Number:
JP2000174438A
Publication Date:
November 16, 2001
Filing Date:
May 08, 2000
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
C25D7/12; C25D19/00; H01L21/28; H01L21/288; H01L21/304; H01L21/306; H01L21/3205; (IPC1-7): H01L21/288; C25D7/12; C25D19/00; H01L21/28; H01L21/304; H01L21/306; H01L21/3205
Attorney, Agent or Firm:
Suyama Saichi