Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2003008031
Kind Code:
A
Abstract:
To provide a manufacturing method which can easily manufacture a Schottky barrier diode with good current characteristics, small area, and desired characteristics.
The Schottky barrier diode which has high performance can be formed by varying the impurity density of the cathode area of the Schottky barrier diode nearby its Schottky junction and cathode electrode and further using a trench structure and heavily doped polycrystalline silicon for the cathode electrode.
Inventors:
SAITO NAOTO
Application Number:
JP2001124855A
Publication Date:
January 10, 2003
Filing Date:
April 23, 2001
Export Citation:
Assignee:
SEIKO INSTR INC
International Classes:
H01L29/872; H01L29/47; (IPC1-7): H01L29/872
Attorney, Agent or Firm:
Masaaki Sakagami