MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Japanese Patent JP2004260054

A

To provide a manufacturing method of a semiconductor device having a high reliability and an excellent high-frequency characteristic.

The manufacturing method of the semiconductor device has a process for forming an insulation film 10 on a semiconductor substrate 1 having a formed semiconductor element, a process for forming contact holes 10a, 10b communicating with the semiconductor element, a process for forming a laminated metal film 11 having a gold film and a titanium film on the insulation film 10 and in the insides of the contact holes 10a, 10b, a process for forming a resist pattern 12, a process for forming gold plating films 13A, 13B on the exposed portions of the laminated metal film 11 to opening portions, a process for removing the resist pattern 12, and a process wherein after etching the gold film by using the gold plating films 13A, 13B as masks and by using the titanium film as an etching stopping film, the titanium film is so etched by using the gold plating films 13A, 13B as masks as to remove therefrom the exposed portions of the laminated metal film 11 to the external.

JP2550495	[Title of the Invention] A method for manufacturing a semiconductor device
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JPS61168964	MANUFACTURE OF SCHOTTKY GATE FIELD EFFECT TRANSISTOR

HIKITA MASAHIRO
TANAKA TAKESHI
UEMOTO YASUHIRO
ISHIDA HIDETOSHI
NAKANO TAKAYUKI

JP2003050730A

September 16, 2004

February 27, 2003

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MATSUSHITA ELECTRIC IND CO LTD

H01L29/812; H01L21/338; (IPC1-7): H01L21/338; H01L29/812

Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Takashi Goto
Iseki Katsumori

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