To provide a manufacturing method of a semiconductor device capable of suppressing increase in the contact resistance caused by the shrinkage of a diffusion layer region, even when forming the diffusion layer region thiny.
When forming the diffusion layer region 5 separated by an element isolation region, the diffusion layer region 5 is formed separately in two stages by using a double exposure technique. Thus, even when forming the diffusion layer region 5 thiny, the shrinkage at both ends in the longitudinal direction of the diffusion layer region 5 is suppressed, and the increase of the contact resistance is suppressed, while securing the connection area of both ends in the longitudinal direction of the diffusion layer region 5 and a contact plug 13 embedded in a contact hole 12.
Tadashi Takahashi
Naoki Ofusa
Kazunori Onami