To provide a semiconductor device that can prevent a ferroelectric film from deteriorating and has an improved bid yield having a ferroelectric capacitor of improved hysteresis characteristics, and to provide a manufacturing method of the semiconductor device.

The manufacturing method includes: a process for depositing the material film of a first electrode 32 at an upper portion of a substrate; a process for depositing the material film of a ferroelectric film 33 on the material film of the first electrode 32; a process for depositing the material film of a second electrode 34 on the material film of the ferroelectric film 33; a process for depositing the material film of a plug 4 at an upper portion of the material film of the second electrode 34; a process for forming the plug 4 by etching the material film of the plug 4; a process for forming a ferroelectric capacitor 3 having the first electrode 32, the ferroelectric film 33, and the second electrode 34 by etching the material films of the first electrode 32, the ferroelectric film 33, and the second electrode 34; a process for forming an interlayer insulation film 6 at upper portions of the ferroelectric capacitor 3 and the plug 4; a process for exposing the upper surface of the plug 4; and a process for forming interconnection which electrically connects with the plug on the interlayer insulation film 6 after exposing the upper surface of the plug 4.