MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Japanese Patent JP2013016598

A

To provide a manufacturing method of a semiconductor device capable of simultaneously forming a dielectric film of a different memory cell and a dielectric film of a capacitor without lowering throughput.

The manufacturing method of a semiconductor device includes the steps of: forming a first dielectric film in which a first oxide film 18, a nitride film 19, and a second oxide film 20 are formed in this order, on a first semiconductor film 16; etching a first dielectric film 21 in a first region I; forming a third oxide film 25 on a surface of a semiconductor substrate 1 in the first region I; forming a mask 28 having openings 28a and 28b in a first region VI and a second region III and further having a shape covering the first dielectric film 21 in a third region II, above the semiconductor substrate 1; and simultaneously etching the third oxide film 25 in the first region VI and the second oxide film 20 of the first dielectric film 21 in the second region III through the openings 28a and 28b of the mask 28.

TSUTSUMI MASANORI
OGAWA HIROYUKI
MIZUTANI KAZUHIRO

JP2011147634A

January 24, 2013

July 01, 2011

Click for automatic bibliography generation  

FUJITSU SEMICONDUCTOR LTD

H01L21/8247; H01L21/336; H01L21/822; H01L27/04; H01L27/10; H01L27/115; H01L29/788; H01L29/792

JPH0521808A	1993-01-29
JP2000269449A	2000-09-29
JP2010283049A	2010-12-16
JP2004356580A	2004-12-16
JPH0521808A	1993-01-29
JP2000269449A	2000-09-29
JP2010283049A	2010-12-16
JP2004356580A	2004-12-16
JP2001237327A	2001-08-31
JP2009295781A	2009-12-17

Mitsuharu Kawakami

Previous Patent: SUBSTRATE FOR HOUSING HIGH HEAT RADIATION TYPE SEMICONDUCTOR ELEMENT

Next Patent: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE