Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5312718
Kind Code:
B2
Abstract:
A heat treatment for diffusing impurity ions implanted into a silicon layer is performed at a heat treatment temperature which is less than an aggregation temperature of the silicon layer. A thermal aggregation of the silicon layer can be inhibited, thereby reducing a silicon deficiency of the silicon layer.
Inventors:
平下 紀夫
一森 高示
中村 稔之
一森 高示
中村 稔之
Application Number:
JP2001160597A
Publication Date:
October 09, 2013
Filing Date:
May 29, 2001
Export Citation:
Assignee:
ラピスセミコンダクタ株式会社
International Classes:
H01L27/08; H01L27/12; H01L21/265; H01L21/324; H01L21/336; H01L21/8238; H01L21/84; H01L27/092; H01L27/10; H01L29/45; H01L29/786
Domestic Patent References:
| JP11238869A | ||||
| JP2000150384A | ||||
| JP10312985A |
Attorney, Agent or Firm:
亀谷 美明