半導体装置の作製方法 - Semiconductor Energy Laboratory Co., Ltd.

Title:

半導体装置の作製方法

Document Type and Number:

Japanese Patent JP5354884

Kind Code:

B2

Abstract:

To provide an element structure in which defects are not easily generated, and to provide a semiconductor device having the same.

An element has a structure in which a layer containing an organic compound is interposed between a pair of electrode layers of a first electrode layer and a second electrode layer. At least one of the pair of the electrode layers has a Young's modulus of ≤7.5×1010N/m2. A layer containing an organic compound is formed using an organic compound appropriate to usage of an element to be formed, and a memory element, a light-emitting element, a piezoelectric element, or an organic transistor element is formed.

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Inventors:

Ryoji Nomura
Takaaki Nagata
Naoto Kusumoto

Application Number:

JP2007268777A

Publication Date:

November 27, 2013

Filing Date:

October 16, 2007

Export Citation:

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Assignee:

Semiconductor Energy Laboratory Co., Ltd.

International Classes:

H01L21/28; H01L21/02; H01L21/3205; H01L21/336; H01L21/768; H01L23/522; H01L27/12; H01L27/28; H01L29/786; H01L41/09; H01L41/18; H01L41/193; H01L51/05; H01L51/50; H05B33/26

Domestic Patent References:

JP2006191083A
JP6295788A
JP2003187974A
JP9035871A
JP8209120A
JP2005085705A
JP2004349543A
JP2006165535A
JP2005136324A

Foreign References:

WO2006023338A1

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