Title:
Manufacturing method of semiconductor device
Document Type and Number:
Japanese Patent JP5939846
Kind Code:
B2
Abstract:
In a method of manufacturing a semiconductor device, a body region is formed in an epitaxial layer provided on a semiconductor substrate. A part of a semiconductor material forming the body region surface is removed to form a convex-type contact region protruding from the body region surface and to form a shallow trench surrounding the convex-type contact region. A deep trench region is formed so as to extend from the shallow trench surface to inside of the epitaxial layer. A gate insulating film is formed on an inner wall of the deep trench region which is filled with polycrystalline silicon that is held in contact with the gate insulating film. A source region and a body contact region are formed in the shallow trench and the convex-type contact region, respectively, and a silicide layer is formed to connect the source region and the body contact region to each other.
Inventors:
Naoto Saito
Application Number:
JP2012053555A
Publication Date:
June 22, 2016
Filing Date:
March 09, 2012
Export Citation:
Assignee:
SII Semiconductor Corporation
International Classes:
H01L29/78; H01L21/336; H01L21/76
Domestic Patent References:
| JP11145465A | ||||
| JP63186476A | ||||
| JP2011204808A | ||||
| JP2002305305A | ||||
| JP2008117826A | ||||
| JP2009076762A |
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