Title:
Manufacturing method of semiconductor device
Document Type and Number:
Japanese Patent JP5949171
Kind Code:
B2
Abstract:
A single-crystal substrate is placed on a supporting table while maintaining crystalline orientation of the single-crystal substrate. The single-crystal substrate has contacting regions on a periphery of an upper surface of the single-crystal substrate. Linear contacting surfaces of contacting pins are placed in contact with the contacting regions of the single-crystal substrate placed on the supporting table. Longitudinal directions on the contacting surfaces of all the contacting pins are not parallel to intersecting lines of the upper surface of the single-crystal substrate and cleaved surfaces of the single-crystal substrate.
Inventors:
Kazuhiro Maeda
Koichiro Nishizawa
Koichiro Nishizawa
Application Number:
JP2012124051A
Publication Date:
July 06, 2016
Filing Date:
May 31, 2012
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
C25D7/12; C25D13/22; H01L21/677
Domestic Patent References:
| JP2008098518A | ||||
| JP2002212794A | ||||
| JP2009295849A |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno