Title:
Manufacturing method of semiconductor device
Document Type and Number:
Japanese Patent JP6111907
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce stress concentration occurring on a surface electrode.SOLUTION: A semiconductor device 100 comprises: a semiconductor element 1 having a surface electrode 12; a first protective layer 17 which has an opening and is formed on the surface electrode 12; an additional electrode 16 which is formed on the surface electrode 12 in the opening of the first protective layer 17 so as to lie on the first protective layer 17 from the inside of the opening of the first protective layer 17; an external terminal 6 electrically connected to the additional electrode 16; and a bonding material 4 formed on the additional electrode 16, for bonding the additional electrode 16 and the external terminal 6.
Inventors:
Hiroaki Okabe
Application Number:
JP2013141890A
Publication Date:
April 12, 2017
Filing Date:
July 05, 2013
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/60; H01L21/28
Domestic Patent References:
| JP2010272711A | ||||
| JP200368738A | ||||
| JP11163045A | ||||
| JP6510364A | ||||
| JP2006505933A | ||||
| JP9181115A |
Attorney, Agent or Firm:
Kanako Murakami
Shigeaki Matsui
Kuratani Yasutaka
Kenro Date
Shigeaki Matsui
Kuratani Yasutaka
Kenro Date
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