Title:
Manufacturing method of semiconductor device
Document Type and Number:
Japanese Patent JP6156748
Kind Code:
B2
Abstract:
A semiconductor device includes a substrate made of a semiconductor material, an n-type semiconductor layer arranged on a portion of one principal surface of the substrate, and a p-type semiconductor layer arranged on a portion of the one principal surface of the substrate, the portion not provided with the n-type semiconductor layer. The n-type semiconductor layer includes a portion located right above the p-type semiconductor layer.
Inventors:
Takuo Nakai
Naoya Soya
Morikami Mitsuaki
Naoya Soya
Morikami Mitsuaki
Application Number:
JP2014503744A
Publication Date:
July 05, 2017
Filing Date:
February 19, 2013
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L21/308; H01L21/306; H01L31/0747
Domestic Patent References:
| JP2012033810A | ||||
| JP2009147070A | ||||
| JP2010080887A |
Foreign References:
| WO2010113750A1 |
Attorney, Agent or Firm:
Hiromori Arai
Eisaku Teratani
Shinichi Michisaka
Eisaku Teratani
Shinichi Michisaka