Title:
Manufacturing method of semiconductor device
Document Type and Number:
Japanese Patent JP6211947
Kind Code:
B2
Abstract:
In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.
Inventors:
Kazuto Ogawa
Kazuki Narushige
Takanori Sato
Kazuki Narushige
Takanori Sato
Application Number:
JP2014020626A
Publication Date:
October 11, 2017
Filing Date:
February 05, 2014
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065
Domestic Patent References:
| JP2002110650A | ||||
| JP2012114402A | ||||
| JP2013080909A | ||||
| JP2004093634A | ||||
| JP5326499A | ||||
| JP2012195302A | ||||
| JP2011211200A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Yoshiki Kuroki
Junji Kashiwaoka