Title:
Manufacturing method of semiconductor device
Document Type and Number:
Japanese Patent JP6234441
Kind Code:
B2
Abstract:
Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJ1 and a projecting portion PJ2 are provided in an end portion PU of a socket terminal STE1. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJ1 and by a contact using the projecting portion PJ2, for example. As a result, the current flowing from the socket terminal STE1 to the lead flows by being dispersed into a path flowing in the projecting portion PJ1 and a path flowing in the projecting portion PJ2. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STE1 and the lead even in a case where the large current is caused to flow between the socket terminal STE1 and the lead.
Inventors:
Toshiji Ishii
Naohiro Makihira
Hidekazu Iwasaki
Jun Matsuhashi
Naohiro Makihira
Hidekazu Iwasaki
Jun Matsuhashi
Application Number:
JP2015511033A
Publication Date:
November 22, 2017
Filing Date:
April 11, 2013
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
G01R31/26; G01R1/067; H01R33/76
Domestic Patent References:
| JP2005310907A | ||||
| JP200796196A | ||||
| JP200271748A | ||||
| JP2000228262A | ||||
| JP9223556A | ||||
| JP2005277168A | ||||
| JP2010273541A | ||||
| JP2012220438A |
Attorney, Agent or Firm:
Tsutsui International Patent Office