Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP6983569
Kind Code:
B2
Abstract:
To increase the yield of the separation process. To produce display devices formed through the separation process with higher mass productivity. A first layer is formed using a material including a resin or a resin precursor over a substrate. Then, first heat treatment is performed on the first layer, whereby a first resin layer including a residue of an oxydiphthalic acid is formed. Then, a layer to be separated is formed over the first resin layer. Then, the layer to be separated and the substrate are separated from each other. The first heat treatment is performed in an atmosphere containing oxygen.
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Inventors:
Shunpei Yamazaki
Seiji Homoto
Yuka Kobayashi
Satoru Idojiri
Seiji Homoto
Yuka Kobayashi
Satoru Idojiri
Application Number:
JP2017148960A
Publication Date:
December 17, 2021
Filing Date:
August 01, 2017
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
B32B3/04; H05B33/10; B32B3/18; B32B37/06; B32B37/26; G09F9/00; G09F9/30; H01L27/32; H01L51/50; H05B33/02
Domestic Patent References:
| JP2015227418A | ||||
| JP2011227369A | ||||
| JP2016136515A |
Foreign References:
| WO2016152906A1 | ||||
| WO2014203794A1 | ||||
| WO2014073591A1 |
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