Title:
半導体装置、および、構造体の製造方法
Document Type and Number:
Japanese Patent JP7084371
Kind Code:
B2
Abstract:
There is provided a semiconductor device, including: a substrate; a group III nitride layer on the substrate, the group III nitride layer containing group III nitride; and a recess on the group III nitride layer, the group III nitride layer including: a channel layer, and a barrier layer on the channel layer, thereby forming a two-dimensional electron gas in the channel layer, the barrier layer including: a first layer containing aluminum gallium nitride, and a second layer on the first layer, the second layer containing aluminum gallium nitride added with an n-type impurity, wherein the recess is formed by removing all or a part of a thickness of the second layer, and at least a part of a thickness of the first layer is arranged below the recess.
Inventors:
Ichikawa
Horikiri Bunsho
Fukuhara Noboru
Horikiri Bunsho
Fukuhara Noboru
Application Number:
JP2019205235A
Publication Date:
June 14, 2022
Filing Date:
November 13, 2019
Export Citation:
Assignee:
SIOX Co., Ltd.
Sumitomo Chemical Co., Ltd.
Sumitomo Chemical Co., Ltd.
International Classes:
H01L21/338; H01L21/3063; H01L29/778; H01L29/812
Domestic Patent References:
| JP2010287714A | ||||
| JP2014207287A | ||||
| JP2013033829A | ||||
| JP2008109162A | ||||
| JP2012175088A | ||||
| JP2011077122A | ||||
| JP2018152410A | ||||
| JP2012156263A |
Attorney, Agent or Firm:
Masahiro Fukuoka
Hideo Tachibana
Hideo Tachibana
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