Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP3742906
Kind Code:
B2
Abstract:
A SiO2 film serving as a gate dielectric film is formed on a silicon substrate. A seed Si film is formed on the gate dielectric film. A thin SiGe film of a thickness of 50 nm or less is formed on the seed Si film at a temperature between 450° C. and 494° C., and a thin cap Si film of a thickness of 0.5 nm to 5 nm is continuously formed on the thin SiGe film at the same temperature.
Inventors:
Akiyoshi Muto
Application Number:
JP2003129986A
Publication Date:
February 08, 2006
Filing Date:
May 08, 2003
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/28; H01L29/78; H01L29/423; H01L29/49
Domestic Patent References:
| JP2002043566A | ||||
| JP2001320045A | ||||
| JP2002261047A | ||||
| JP2003086798A | ||||
| JP2002510438A |
Attorney, Agent or Firm:
Mamoru Takada
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