Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4607850
Kind Code:
B2
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Inventors:
Kyoichi Suguro
Koji Matsuo
Atsushi Murakoshi
Yasuhiko Sato
Hiromi Niiyama
Koji Matsuo
Atsushi Murakoshi
Yasuhiko Sato
Hiromi Niiyama
Application Number:
JP2006324855A
Publication Date:
January 05, 2011
Filing Date:
November 30, 2006
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/78; H01L21/265; H01L21/28; H01L21/336; H01L29/423; H01L29/49
Domestic Patent References:
| JP11224947A | ||||
| JP7094715A | ||||
| JP6168918A | ||||
| JP4023425A | ||||
| JP53101265A |
Attorney, Agent or Firm:
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto