半導体装置の製造方法 - Hitachi Chemical Co., Ltd.

Title:

半導体装置の製造方法

Document Type and Number:

Japanese Patent JP4734800

Kind Code:

B2

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Inventors:

Hiroyuki Kawakami
Yuji Hasegawa

Application Number:

JP2001256541A

Publication Date:

July 27, 2011

Filing Date:

August 27, 2001

Export Citation:

Assignee:

Hitachi Chemical Co., Ltd.

International Classes:

C09J7/02; H01L21/52; C09J163/00; C09J179/08

Domestic Patent References:

Attorney, Agent or Firm:

Hidekazu Miyoshi
Iwa Saki Kokuni
Kawamata Sumio
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu

Previous Patent: JPS4734799

Next Patent: 干渉カラーフィルタおよびその製造方法