To manufacture a semiconductor device having a silicon-containing electrode on a high dielectric film composed of a MISFET and a MIS capacitor having an excellent reliability for a prolonged term and having a high performance.
In a process, the high dielectric film is formed on a semiconductor substrate. In the process, a first heat treatment (a first PDA) in an oxidizing atmosphere is carried out to the high dielectric film. In the process, a silicon nitride layer is formed on the surface of the high dielectric film after the first PDA. In the process, a second heat treatment (a second PDA) is carried out to the high dielectric film coated with the silicon nitride layer and the silicon nitride layer. In the process, a silicon-containing semiconductor film or a conductor film is formed on the silicon nitride layer. The MISFET or the like having the excellent reliability for the prolonged term and the high performance can be realized by forming a high dielectric gate insulating film and a gate electrode or the like through these processes.
COPYRIGHT: (C)2006,JPO&NCIPI
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Tetsuma Ikegami
Akira Sudo
Junichi Yokoyama