Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5313547
Kind Code:
B2
Abstract:
A plasma nitriding process is followed by a selective etching process which removes a silicon oxynitride film formed on surfaces of both an element separation film and an insulation film while leaving a silicon nitride film formed on an electrode layer. The selective etching process removes the silicon oxynitride film formed on the surfaces of the element separation film and the insulation film.
Inventors:
Yoshihiro Hirota
Yoshihiro Sato
Nobuo Okumura
Yoshihiro Sato
Nobuo Okumura
Application Number:
JP2008123561A
Publication Date:
October 09, 2013
Filing Date:
May 09, 2008
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/8247; H01L21/28; H01L21/306; H01L21/318; H01L21/336; H01L27/115; H01L29/423; H01L29/49; H01L29/788; H01L29/792
Domestic Patent References:
| JP2005026590A | ||||
| JP2007005696A | ||||
| JP2008078317A | ||||
| JP2001176839A | ||||
| JP10163348A | ||||
| JP2006310393A |
Attorney, Agent or Firm:
Kazuhiro Watanabe
Katsumi Hoshimiya
Katsumi Hoshimiya